All transistor list pdf. POWER MOSFET, IGBT, IC, TRIACS DATABASE.
All transistor list pdf. Size:45K panasonic 2sc5609.
All transistor list pdf 59 V @25℃ ances normally found in transistors. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS AF139 Datasheet, Equivalent, Cross Reference Search -71 106nu70-71 107nu70-71 gc507 gc508 gc509 gc515 gc516 gc517 gc518 gc519 gf505 gf506 gf507 af106 af109r af239 af139. 015 A Tjⓘ - Maximum Junction Temperature: 150 °C Cossⓘ - Output Capacitance: 1. 4 V @25℃ CRG75T60AK3HD IGBT. 3 W BF254 Datasheet (PDF) AC180 Datasheet, Equivalent, Cross Reference Search Type Designator: AC180 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. A transistor is an electronic device that is used to allow one electrical signal to control another electrical signal, typically larger in either voltage or current. 0ACE(sat) CComplement to Type 2SB512Minimum Lot-to-Lot variations for robust deviceperformance MAC15-6 Triac DATASHEET MAC15-6 ELECTRICAL SPECIFICATIONS Type: Triac Maximum peak gate power (P GM): 20 W Maximum repetitive peak and off-state voltage (V DRM): 600 V Maximum RMS on-state current (I T(RMS)): 15 A Non repetitive surge peak on-state current (I TSM): 150 A Critical rate of rise of off-state voltage (dV/dt): 5 V/µs TGD30N40P IGBT. 16. S9013 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S9012 ; Complementary to S9012 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package BC207 Datasheet, Equivalent, Cross Reference Search Type Designator: BC207 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: CRG40T60AK3HD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 336 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V YGW60N65F1A2 IGBT. 75 V HY5012W MOSFET. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V |Id|ⓘ - Maximum Drain Current: 3. 3 W TGAN60N60F2DS IGBT. 1 pF Rdsⓘ - Maximum Drain TGAN20N135FD IGBT. com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector 40312 Transistor Datasheet pdf, 40312 Equivalent. 1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to TK11A60D Transistor Datasheet, TK11A60D Equivalent, PDF Data Sheets. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2. Datasheet: 1MbKb/5P. Cross-Reference Search Result (Equivalent Transistors) Type: Code: 100DA025D 100T2 101NU70 101NU71 102NU70 102NU71 103NU70 103NU71 104NU70 104NU71 104T2 UNISONIC TECHNOLOGIES CO. 2SC3205 Datasheet. irfb4110g. Chapter 10 reviews the operation of the bipolar junction all alterations on this set only. 2Complementary to 2SC1567, 2SC1567A 3. 2SC9013 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC9013 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. All Transistors Datasheet. Equivalent Type Designator: FHP110N8F5A Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 157 W |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 120 A 2sc9014. Pc > W Vce > V Vce sat V Vge > V VGE th V Ic > A Tj > C tr ns Cc pF Qg nC LIST Last Update. Size:194K inchange semiconductor bd249 bd249a bd249b bd249c. 7 V @25℃ GT30F124 IGBT. stps2045ct RoHS, Compliant, Service, Triacs, Semiconductor. FGD4536 IGBT. 3. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS KD617 Datasheet, Equivalent, Cross Reference Search Type Designator: KD617 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 70 W KD617 Datasheet (PDF) 2sa719. 2. pdf DISCRETE SEMICONDUCTORSDATA SHEETM3D110BC160; BC161PNP medium power transistorsProduct specification 1997 May 12Supersedes data of September 1994File under bd533 bd534 bd535 bd536 bd537. Size:160K renesas r07ds0467ej rjp30h2dpk. Equivalent Type Designator: YGW60N65F1A1 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 260 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V SMD Transistor Code: КТ816Б Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 25 W Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 6 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 3 MHz All Transistors. 415. This application note explains the types of transistors and their features. Equivalent Type Designator: AON7403 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V |Id|ⓘ - Maximum Drain Current: 29 A SI2305DS MOSFET. 2N3055 Datasheet. As this book contains many thousands of transistors, it has been necessary to use some form of abbreviation in listing the possible replacements for a required transistor type. Each class can be 0. Elenca circa 5000 tipi di transistori dei principali produttori europei e americani dell'epoca, con l'indicazione degli eventuali equivalenti asiatici. 225 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V |Id|ⓘ - Maximum Drain Current: 0. 9. 3 V 2SC733 Datasheet (PDF) - List of Unclassifed Manufacturers: Part # 2SC733: Download 2SC733 Download: File Size 512. 3. KTC3228 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2N3055 Datasheet, Equivalent, Cross Reference Search 2n3055b. We do require that any defective device be replaced with the same part number by PEAVEY. 5, 05-Sep-08: BF979: 51Kb / 5P: Silicon PNP Planar RF Transistor Rev. isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS All Transistors. 2 W FGH60N60SFD IGBT. 24. 5A of load Fill All Transistor Equivalent Book Download Pdf, Edit online. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC9014DESCRIPTIONHigh total power dissipationHigh hFE and good linearityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER 7. 60. 7 V GT60M324 IGBT. pdf Power Transistors www. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC711 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC711 Material of Transistor: Si Polarity: NPN Maximum . 2SC633A Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC633A Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: AO3407 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 50. 79 Kbytes: Page 1 Pages : Manufacturer: (RF POWER TRANSISTOR) SEMTECH ELECTRONICS MBQ50T65FDSC IGBT. jmnic. Transistors can be used to create more sophisticated circuits, amplify an electrical signal and even serve as the fundamental building block of a modern computer. pdf NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO. P2SC2222H NPN General Purpose Switching Transistor SOT-89 40V 600mA Voltage Current Features NPN epitaxial Silicon, Planar Design Collector-emitter voltage VCE = 40V Collector current = 600mA Lead free in SGT50T65FD1PT IGBT. Equivalent Type Designator: IHW20N135R5 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 288 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V |Vge|ⓘ - Maximum BF245B MOSFET. 35 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Id|ⓘ - Maximum Drain Current: 0. 3 A . 10+0. All MOSFET. 2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig. Equivalent Type Designator: HY5012W Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 500 W |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V |Id|ⓘ - Maximum Drain Current: 300 A Tjⓘ - Maximum Junction Temperature: 175 °C All Transistors. 2V to 37V ·Output Current In Excess of 1. Part #: 2SC3356D. BASE FEATURE 1 High voltage 2. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC3205 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC3205 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 1 W 2SC3205 Datasheet (PDF) All Transistors. 4A)CE(sat) C BComplement to Type 0. Description: NPN Silicon RF Transistor. 1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) "Transistor Cross-Reference Guide", supplemento alla rivista "Selezione di tecnica radio TV hifi elettronica" n° 4, 1980. Parameters and Characteristics . IGBT Selection. Datasheet: 60Kb/4P. 02Complementary to 2SA20213 Features High foward current transfer ratio 7. The IRF610 MOSFET. Datasheet. Size:214K inchange semiconductor 2sd2059. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output All Transistors. bc547ba3. Base 3. Equivalent Type Designator: IRF1404 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 333 W |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 202 A Tjⓘ - Maximum Junction Temperature: 175 °C GT30G124 IGBT. 5 V @25℃ Package: TO220SIS 2SC627 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC627 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. pdf 2SC4883/4883ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings NPN Silicon Transistor SUNMATE electronic Co. Parameters and Characteristics 2sd882-r 2sd882-q 2sd882-p 2sd882-e. Equivalent Type Designator: IKW75N60T Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 428 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 80 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Electronic Supply. Size:210K inchange semiconductor 2sd365. Equivalent Type Designator: SI2305DS Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1. 1% Line and Load Regulation ·Floating Operation for High Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·They are designed to supply more than 1. You can use the CTRL + F shortcut to search for a certain SMD transistor code because it will be hard to look through 3400 codes, with type numbers, characteristics or equivalents and pinout information. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC9014DESCRIPTIONHigh total power dissipationHigh hFE and good linearityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM All Transistors. KD617 Datasheet. Size:203K inchange semiconductor bd245 a b c. stps2045ct Datasheet, Design, MOSFET, Power. 75 V How to read SMD transistor codes Next look up the code in the alphanumeric listing which forms the main part of the pdf book by looking for the first character in the left column. Equivalent Type Designator: BF245B Type of Transistor: FET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C . Equivalent Type Designator: IKW25N120H3 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 326 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 50 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, BF981 MOSFET. Features BD533, BD535, and BD537 are NPN transistorsDescription3The devices are manufactured in Planar 21technology with Base Island layout. Electronic Component Catalog. , LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple ksp44 ksp45. Featureswww. 011(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC motor controlDC-DC converters FGH60N60SFD IGBT. 36 W 2SC639 Datasheet (PDF) 1. Equivalent Type Designator: SVT20240NT Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 263 W |Vds|ⓘ - Maximum Drain-Source How a BJT (Bipolar Junction Transistor) Works It’s all in the doping The way a transistor works can be described with reference to Fig. 65 V 7. Revised Date : Page No. Equivalent Type Designator: SGT60N60FD1P7 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 321 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V All Transistors. pdf 2SC1345(K)Silicon NPN EpitaxialApplicationLow frequency low noise amplifierOutlineTO-92 (1)1. isc Silicon PNP Transistor As mentioned earlier, on a broader scale, the major families of Transistors are BJTs and FETs. Size:44K jmnic 2sc1030. Equivalent Type Designator: CRG40T60AN3H Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 280 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 80 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter FHP110N8F5A MOSFET. pdf 145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824 Unit-II BIPOLAR JUNCTION TRANSISTOR INTRODUCTION The transistor was developed by Dr. INNOVATION CATALOG . 3 W 0. 2. 625 W A transistor is an electronic device that is used to allow one electrical signal to control another electrical signal, typically larger in either voltage or current. 5A ·0. Size:50K philips bc160-bc161. UNISONIC TECHNOLOGIES CO. 5 A s9013l s9013h s9013j. Equivalent Type Designator: TGD30N40P Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 56. Size:181K inchange semiconductor 2sd583. 0V(Max)@ (I = 4A, I = 0. Equivalent Type Designator: FGD4536 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 125 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V |Ic|ⓘ - Maximum Collector Current: 50 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Parameters and Characteristics 2N1305 Datasheet (PDF) - List of Unclassifed Manufacturers: Part # 2N1305: Download 2N1305 Download: File Size 267. Equivalent Type Designator: CS3205 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 100 W |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ - Maximum Drain Current: 18 A All Transistors. stps2045ct Database, Innovation, IC, Electricity All Transistors. pdf INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C bf506. Collector3. 02 A Tjⓘ - Maximum Junction Temperature: 150 °C tip36c. 3 W CRG40T60AN3H IGBT. using the manufacturers' current specification or data sheets, before a substitution is "Transistor Cross-Reference Guide", listing about 5000 models of transistors by main European and American manufacturers of the time, with Asiatic equivalents, if any. pdf Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8. Sign, fax and printable from PC, iPad, tablet or mobile with pdfFiller Instantly. 25 W GT45F122 IGBT. BF 506PNP Silicon RF Transistor BF 506 For VHF mixer and oscillator stages231Type Marking Ordering Code Pin Configuration Package1)1 2 3BF 506 Q62702-F534 C B E TO-92Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 35 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 4Collector current IC 30 mABase CS3205 MOSFET. pdf JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio and general purpose applications PINNING(see Fig. Size:265K 1 aon6414al. Datasheet: 2SD542 , 2SD543 , CRG40T65AK5HD IGBT. Parameters and Characteristics isc Silicon NPN Power Transistor List of Unclassifed Man AD162: 1Mb / 14P: GERMANIOVE TRANZISTORY AD163: 329Kb / 4P: GERMANIUM POWER TRANSISTORS Anachip Corp: AD16311: 186Kb / 12P: 1/8 TO 1/16 DUTY VFD CONTROLLER/DRIVER AD16311L: 186Kb / 12P: 1/8 TO 1/16 DUTY VFD CONTROLLER/DRIVER AD16311Q: 186Kb / 12P: 1/8 TO 1/16 DUTY 8. 1. The first band on a resistor is interpreted as the All Transistors. com Extremely Efficient Trench with YGW60N65F1A1 IGBT. JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. Equivalent Type Designator: CRG75T60AK3HD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 390 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 150 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. 2SC710 Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC710 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC710 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 20. 15 Results. 7(max) V @25℃ Tjⓘ - Maximum Junction Temperature: 150 ℃ IHW20N135R5 IGBT. Equivalent Type Designator: CRG40T65AK5HD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 250 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 80 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Keywords. The resulting transistor shows exceptional high gain TO-220performance coupled with very low saturation List of Unclassifed Man 2SD352: 42Kb / 1P: Ge NPN Alloy Junction 2SA52: 47Kb / 1P: GERMANIUM PNP ALLOY JUNCTION TRANSISTOR Panasonic Semiconductor: 2SB493: 50Kb / 1P: GERMANIUM PNP ALLOY JUNCTION TRANSISTOR New Jersey Semi-Conduct 2N1038: 148Kb / 1P: PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS 1N156: 178Kb / 2N1351 Transistor Datasheet pdf, 2N1351 Equivalent. IRF1404 MOSFET. Equivalent Type Designator: 4812 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 2 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 6. BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882 isc Adjustable Voltage Regulator LM317T FEATURES ·Output Voltage Range :1. 25 W SFT353 Datasheet, Equivalent, Cross Reference Search Type Designator: SFT353 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 2SA719 -0. Size:64K central 2n3567 2n3568 2n3569 pn3567 pn3568 pn3569. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC693 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC693 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. There are two main classes of transistors: bipolar transistors and eld-e ect transistors. onsemi. 23 CYStech Electronics Corp. Part #: BC182. 4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V 2sa966. 1VCBO 150 ICBO VCB=150V . tk11a60d. isc N-Channel MOSFET Transistor 75N75FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 0. 160. 6. Base12. Size:45K panasonic 2sc5609. KSP44/45High Voltage Transistor Collector-Emitter Voltage: VCEO=KSP44: 400VKSP45: 350V Collector Power Dissipation: PC (max)=625mW TO-9211. Emitter 2. D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1. Equivalent Type Designator: FGH60N60SFD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 378 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 120 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2. complete listing of germanium transistors silicon transistors and diodes industrial divisions bk-1300 second edition • all types • all brands • numerical listing • specs • late prices Searched Keyword: TRANSISTORS. Emitter2. 3, 20-Jan-99: Continental Device Indi 2N3635: 252Kb / 4P: PNP SILICON PLANAR RF TRANSISTORS New Jersey Semi-Conduct BFX37: 86Kb / 2P: PNP SILICON PLANAR TRANSISTOR List of Unclassifed Man CD9015: 88Kb / 3P: PNP SILICON 75n75. Collector3. Commonly used semiconductor materials for manufacturing transistor are Silicon, Germanium and Gallium-Arsenide. isc Silicon NPN Power Transistor KTC3229DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR) 9. 13. Size:115K inchange semiconductor 2sa1494. 2N551 Datasheet. MOSFET. pdf AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge. 1. 3 V @25℃ Package: TO220SIS 2sc2222h. BD533 BD535 BD537BD534 BD536Complementary power transistors. , LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers withhigh DC current gain and high collector-base breakdown voltage, etc. . pdf Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev. 8 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V |Ic|ⓘ - Maximum Collector Current: 60 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. 1, which shows the basic doping of a junction transistor and Fig. Package: SC-59. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD583DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand BT152 SCR DATASHEET BT152 ELECTRICAL SPECIFICATIONS Type: SCR Maximum repetitive peak and off-state voltage (V DRM): 600 V Maximum average on-state current (I T(AVR)): 13 A Maximum RMS on-state current (I T(RMS)): 20 A Non repetitive surge peak on-state current (I TSM): 200 A Maximum operating junction and storage temperature range (T AO3407 MOSFET. 80. When replacing power output devices, our designs do NOT require Banks or that all be replaced. Equivalent Type Designator: GT45F122 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 25 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V |Ic|ⓘ - Maximum Collector Current: 45 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2. Equivalent Type Designator: TGAN20N135FD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 223 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 40 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, 2N5133 Transistor Datasheet pdf, 2N5133 Equivalent. Size:23K sanken-ele 2sc4883. 05 0. BF254 Datasheet. Spec. Description: Amplifier Transistors Amplifier Transistors. isc Silicon NPN Power Transistor BFR91A Datasheet, Equivalent, Cross Reference Search Type Designator: BFR91A Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 32 W BUY TRANSISTORS. 050. CRG40T60AK3HD IGBT. Equivalent Type Designator: HY1906P Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 188 W |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V SGT60N60FD1P7 IGBT. , LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. pdf Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0. Equivalent Type Designator: MBQ50T65FDSC Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 273 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 100 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS Minimum 3 letters or numbers or try SMD-SEARCH! BUY TRANSISTORS LIST Last Update. Parameters and Characteristics. JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. All Transistors. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 100DA025D --2DI30A-120 2DI30D-050A --2N1122A 2N1123 --2N1335 2N1336 --2N1552A A transistor is a type of semiconductor device that can be used to amplify or switch electronic signals. 22,348 Transistor types can be classified based on their production processes, characteristics, internal circuits, and shapes. : C204A3 Issued Date : 2015. Transistor Database. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor BD249/A/B/CDESCRIPTIONCollector Current -I = 25ACComplement to Type BD250/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose . BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2N551 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N551 Material of Transistor: Si Polarity: NPN Maximum Collector Power 2n6360. The first band on a resistor is interpreted as the N-P-N SILICON POWER TRANSISTORS List of Unclassifed Man 2N4999: 280Kb / 6P: HIGH ENERCY NPN TRANSISTOR New Jersey Semi-Conduct 2N4999: 151Kb / 1P: DISCRETE EMITTER GEOMETRY 2N490: 144Kb / 1P: 2N4991 Datasheet, PDF [Distributor] Distributor: Part # Manufacturer Datasheet: Description: Buy Now: Element14: 2N4991: Marking: R25. Size:239K onsemi ngtb75n65fl2wg. Equivalent Type Designator: IRF610 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 36 W |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ - Maximum Drain Current: 3. , LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SA966 TRANSISTOR (PNP)1. 0V(Max) @I = 2. Manufacturer: SHIKUES Electronics. Shockley along with Bell Laboratories team in 1951 The transistor is a main building block of all modern electronic systems It is a three terminal device whose output current, voltage and power are controlled by its input current BF197 Datasheet, Equivalent, Cross Reference Search Type Designator: BF197 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Equivalent Type Designator: GT30F124 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 25 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V |Ic|ⓘ - Maximum Collector Current: 200(pulse) A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2. Equivalent Type Designator: JT075N065WED Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 539 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 150 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. 00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1. Equivalent Type Designator: YGW60N65F1A2 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 312 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V SVT20240NT MOSFET. Size:224K inchange semiconductor 2sk2645. This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and Manufacturer: Part # Datasheet: Description: New Jersey Semi-Conduct 2SC1940: 305Kb / 2P: NPN SILICON TRANSISTOR 2SC1940: 123Kb / 2P: The 2SC1940 is designed for use in driver stages of audio frequency amplifiers AC122 Transistor Datasheet pdf, AC122 Equivalent. October 3, 2005 18:32 riz63473_ch10 Sheet number 2 Page number 550 magenta black BT169D SCR DATASHEET BT169D ELECTRICAL SPECIFICATIONS Type: SCR Maximum peak gate power (P GM): 2 W Maximum repetitive peak and off-state voltage (V DRM): 400 V Maximum average on-state current (I T(AVR)): . 2A ORDERING INFORMATION IRFB4110 Transistor Datasheet, IRFB4110 Equivalent, PDF Data Sheets. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BF254 Datasheet, Equivalent, Cross Reference Search Type Designator: BF254 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Size:28K sanken-ele 2sc3284. TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0. 9 A Tjⓘ - Maximum Junction Temperature: 150 °C Rdsⓘ - IKW75N60T IGBT. Base3212SC1345 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 PBSS4350X Transistor Datasheet pdf, PBSS4350X Equivalent. Struct = + Anti-Parallel Diode . , S9013: 752Kb / 3P: NPN SILICON EPITAXIAL PLANAR TRANSISTOR Shanghai Leiditech Elec S9013: 588Kb / 4P: NPN Silicon Epitaxial Planar Transistor List of Unclassifed Man S9013: 963Kb / 2P: PLASTIC ENCAPSULATE TRANSISTORS Galaxy Semi-Conductor H S9013: 220Kb / 4P: NPN . Each class can be IRF610 MOSFET. 2SC693 Datasheet. . 2SC711 Datasheet. pdf INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE 2sa1694. pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD365DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1. Datasheet pdf. For example, in the 1st page of the book, if one looks at the alternatives for type 2N37, the replacement types shown read as follows: HY1906P MOSFET. Equivalent Type Designator: SGT50T65FD1PT Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 235 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V BC264 Datasheet, PDF : Search Partnumber : Match&Start with "BC264"-Total : 4 ( 1/1 Page) Manufacturer: Part # Datasheet: Description: NXP Semiconductors: BC264A PNP HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR List of Unclassifed Man BC262: 75Kb / 1P: Low Level and General Purpose Amplifiers Micro Electronics: BC263: BC149B Datasheet, Equivalent, Cross Reference Search Type Designator: BC149B Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. COLLECTOR 2 2 3 Large MN2488 Datasheet, Equivalent, Cross Reference Search Type Designator: MN2488 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 150 W IKW25N120H3 IGBT. 5 V @25℃ The humble transistor is a device that can control the flow of electricity automatically – it’s triggered by the electrical current itself, like a switch. Complement to 1. 7 W transistors represent one of two major families of electronic devices that can serve as amplifiers and switches. Manufacturer: ON Semiconductor. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS KTC3228 Datasheet, Equivalent, Cross Reference Search ktc3229. circuits, to check against the original, the detailed characteristics of possible equivalent transistors by. 0+0. , LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. 33+0. 25 W 4812 MOSFET. 1 W 2SC693 Datasheet (PDF) JT075N065WED IGBT. PBSS4350X Datasheet. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SA1281 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1281 2sa1283. Size:222K inchange semiconductor 2sc9014. The resistor is read in a way that the three colour bands are on the left of the resistor and the single band is to the right. pdf LAPT 2SC3284Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Symbol Conditions Ratings UnitUnit0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS PBSS4350X Datasheet, Equivalent, Cross Reference Search Type Designator: PBSS4350X SMD Transistor Code: S43 Material of Transistor: Si Polarity: NPN Maximum Silicon PNP Planar RF Transistor Rev. 8 V All Transistors. AF139 Datasheet. Equivalent Type Designator: BF981 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. 4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ 2sc4467. 01. 3 V . pdf Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general FGH40N60UFD IGBT. Size:101K panasonic 2sa794. No. Equivalent Type Designator: GT30G124 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 25 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V |Ic|ⓘ - Maximum Collector Current: 200(pulse) A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2. Equivalent Type Designator: TGAN60N60F2DS Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 357 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 120 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Try Now! We use cookies to improve security, personalize the user experience, enhance our marketing activities (including cooperating with our marketing partners) and for other business use. 54 BC148C Datasheet, Equivalent, Cross Reference Search Type Designator: BC148C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Irrespective of the family they belong to, all Transistors have proper / specific arrangement of different semiconductor materials. 3 A 0. 95 V 2sa1013. POWER MOSFET, IGBT, IC, TRIACS DATABASE. IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2 0. It consists of three or four layers of a material called a semiconductor, with each layer having a different electrical property. 2 showing how the BJT works. Equivalent Type Designator: GT60M324 Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 254 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V |Ic|ⓘ - Maximum Collector Current: 60 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. pdf. Applications fall into two groups: ampli ers and switches. 2 W 2SC710 Datasheet (PDF) AON7403 MOSFET. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BC547BA3Description The BC547BA3 is designed for use in driver stage of AF amplifier and low speed switching. pdf isc N-Channel MOSFET Transistor 2SK2645FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSHigh speed SwitchingRepetitive Avalanche All Transistors. Cross Reference Search. 2SC639 Datasheet. 2SA1281 Datasheet. , LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2SC639 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC639 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Size:142K jmnic 2sc1116. CollectorNPN Epitaxial Silicon irfz24vs datasheet pdf. Equivalent Type Designator: FGH40N60UFD Type: IGBT Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 290 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 80 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1. Complementary to BC557BA3. 79 Kbytes: Page 3 Pages : Manufacturer: ETC1 [List of Unclassifed Manufacturers] Direct Link : Logo : 0. Size:75K sanyo 2sa1434. 9 V All Transistors. Size:43K hitachi 2sc1345. 5 A, -30 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. 02 0. aqfczwsxcoeaoefsegcxrurnjdiauvgrsgrkriixxuxamvvxmurzs